| Effects of concentration and annealing on the performance of regioregular poly（3-hexylthiophene） field-effect transistors |
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| 引用本文： | 田雪雁,徐征,赵谡玲,张福俊,袁广才,徐叙瑢.Effects of concentration and annealing on the performance of regioregular poly（3-hexylthiophene） field-effect transistors[J].中国物理 B,2009,18(8):3568-3572. |
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| 作者姓名： | 田雪雁 徐征 赵谡玲 张福俊 袁广才 徐叙瑢 |
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| 作者单位： | Institute of Optoelectronics Technology, Beijing Jiaotong
University, Beijing 100044, ChinaKey Laboratory of
Luminescence and Optical Information (Beijing Jiaotong
University), Ministry of Education, Beijing 100044, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant Nos 10774013, 10804006),
the National High Technology Research and Development Program of
China (Grant No 2006AA03Z0412), the Research Fund for the Doctoral
Program of Higher Education of China (Grant No 20070004024); The
Research Fund for the Youth Scholars of the Doctoral Program of
Higher Education (Grant No 20070004031), the Beijing NOVA Program
(Grant No 2007A024) and the 111 Project (Grant No B08002). |
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| 摘 要： | This paper investigates the effects of concentration on the
crystalline structure, the morphology, and the charge carrier
mobility of regioregular poly(3-hexylthiophene) (RR-P3HT)
field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an
active layer with different concentrations of RR-P3HT solution from
0.5~wt% to 2~wt% are prepared. The results indicate that the
performance of RR-P3HT FETs improves drastically with the increase
of RR-P3HT weight percentages in chloroform solution due to the
formation of more microcrystalline lamellae and bigger nanoscale
islands. It finds that the field-effect mobility of RR-P3HT FET with
2~wt% can reach 5.78× 10^-3~cm2/Vs which is higher
by a factor of 13 than that with 0.5~wt%. Further, an appropriate
thermal annealing is adopted to improve the performance of RR-P3HT
FETs. The field-effect mobility of RR-P3HT FETs increases
drastically to 0.09~cm2/Vs by thermal annealing at
150~℃, and the value of on/off current ratio can reach
10^4.
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| 关 键 词： | field-effect transistors regioregular poly(3-hexylthiophene) concentration annealing field-effect mobility |
| 收稿时间： | 2008-12-05 |
| 修稿时间： | 1/5/2009 12:00:00 AM |
Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors |
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| Tian Xue-Yan,Xu Zheng,Zhao Su-Ling,Zhang Fu-Jun,Yuan Guang-Cai and Xu Xu-Rong.Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors[J].Chinese Physics B,2009,18(8):3568-3572. |
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| Authors: | Tian Xue-Yan Xu Zheng Zhao Su-Ling Zhang Fu-Jun Yuan Guang-Cai and Xu Xu-Rong |
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| Affiliation: | Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China; Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China |
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| Abstract: | This paper investigates the effects of concentration on the
crystalline structure, the morphology, and the charge carrier
mobility of regioregular poly(3-hexylthiophene) (RR-P3HT)
field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an
active layer with different concentrations of RR-P3HT solution from
0.5~wt{\%} to 2~wt{\%} are prepared. The results indicate that the
performance of RR-P3HT FETs improves drastically with the increase
of RR-P3HT weight percentages in chloroform solution due to the
formation of more microcrystalline lamellae and bigger nanoscale
islands. It finds that the field-effect mobility of RR-P3HT FET with
2~wt{\%} can reach 5.78$\times 10^{-3}$~cm$^{2}$/Vs which is higher
by a factor of 13 than that with 0.5~wt{\%}. Further, an appropriate
thermal annealing is adopted to improve the performance of RR-P3HT
FETs. The field-effect mobility of RR-P3HT FETs increases
drastically to 0.09~cm$^{2}$/Vs by thermal annealing at
150~${^\circ}$C, and the value of on/off current ratio can reach
10$^{4}$. |
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| Keywords: | field-effect transistors regioregular poly(3-hexylthiophene) concentration annealing
field-effect mobility |
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