| Nanocrystalline silicon films prepared by laser—induced crystallization |
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| 引用本文： | 傅广生,于 威,李社强,侯海虹,彭英才,韩 理.Nanocrystalline silicon films prepared by laser—induced crystallization[J].中国物理 B,2003,12(1):75-78. |
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| 作者姓名： | 傅广生 于 威 李社强 侯海虹 彭英才 韩 理 |
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| 作者单位： | (1)College of Electronic and Informational Engineering, Hebei University, Baoding, 071002, China; (2)College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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| 基金项目： | Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 500084). |
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| 摘 要： | The excimer laser-induced crystallization technique has been
used to investigate the preparation of nanocrystalline silicon (nc-Si)
from amorphous silicon ($\al$-Si) thin films on silicon or glass
substrates. The $\al$-Si films without hydrogen grown by pulsed-laser
deposition are chosen as precursor to avoid the
problem of hydrogen effluence during annealing. Analyses
have been performed by scanning electron microscopy, atomic
force microscopy, Raman scattering spectroscopy and high-resolution
transmission--electron microscopy. Experimental results show
that silicon nanocrystals can be formed through laser annealing.
The growth characters of nc-Si are strongly dependent on the laser
energy density. It is shown that the volume of the molten silicon
predominates essentially the grain size of nc-Si, and the surface
tension of the crystallized silicon is responsible for the mechanism of nc-Si growth.
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| 关 键 词： | 薄膜制备 纳米结晶硅 激光诱发晶化 |
| 收稿时间： | 2002-06-21 |
Nanocrystalline silicon films prepared by laser-induced crystallization |
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| Fu Guang-Sheng,Yu Wei,Li She-Qiang,Hou Hai-Hong,Peng Ying-Cai and Han Li.Nanocrystalline silicon films prepared by laser-induced crystallization[J].Chinese Physics B,2003,12(1):75-78. |
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| Authors: | Fu Guang-Sheng Yu Wei Li She-Qiang Hou Hai-Hong Peng Ying-Cai and Han Li |
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| Affiliation: | College of Physics Science and Technology, Hebei University, Baoding 071002, China; College of Electronic and Informational Engineering, Hebei University, Baoding, 071002, China |
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| Abstract: | The excimer laser-induced crystallization technique has been
used to investigate the preparation of nanocrystalline silicon (nc-Si)
from amorphous silicon ($\al$-Si) thin films on silicon or glass
substrates. The $\al$-Si films without hydrogen grown by pulsed-laser
deposition are chosen as precursor to avoid the
problem of hydrogen effluence during annealing. Analyses
have been performed by scanning electron microscopy, atomic
force microscopy, Raman scattering spectroscopy and high-resolution
transmission--electron microscopy. Experimental results show
that silicon nanocrystals can be formed through laser annealing.
The growth characters of nc-Si are strongly dependent on the laser
energy density. It is shown that the volume of the molten silicon
predominates essentially the grain size of nc-Si, and the surface
tension of the crystallized silicon is responsible for the mechanism of nc-Si growth. |
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| Keywords: | laser annealing crystallization nanocrystalline silicon |
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