| BAs晶体生长研究进展 |
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| 引用本文： | 刘京明,赵有文.BAs晶体生长研究进展[J].人工晶体学报,2021,50(2):391-396. |
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| 作者姓名： | 刘京明 赵有文 |
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| 作者单位： | 中国科学院半导体研究所,北京 100083 |
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| 摘 要： | 立方砷化硼(BAs)为间接带隙、闪锌矿结构的Ⅲ-Ⅴ族化合物半导体材料。理论分析预测BAs具有仅次于金刚石的超高热导率,在电子器件散热领域表现出广阔应用前景,成为当前的研究热点。近年来立方BAs单晶材料的制备取得突破性进展,采用化学气相传输法(CVT)合成了毫米尺寸的高质量单晶,室温下热导率高达1 300 W·m-1·K-1。本文介绍了BAs单晶的性质和生长方法,综述了材料研究进展,阐述了晶体生长面临的技术挑战,并对发展前景进行了展望。
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| 关 键 词： | 砷化硼 热导率 化合物半导体 晶体生长 化学气相传输 |
| 收稿时间： | 2020-12-31 |
Research Progress of BAs Crystal Growth |
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| LIU Jingming,ZHAO Youwen.Research Progress of BAs Crystal Growth[J].Journal of Synthetic Crystals,2021,50(2):391-396. |
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| Authors: | LIU Jingming ZHAO Youwen |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Cubic boron arsenide (BAs) belongs to Ⅲ-V compound semiconductor with indirect band gap and zin-blende FCC structure. First-principles calculations based on four-phonon scattering indicate that zinc-blende BAs has an unusually high room-temperature thermal conductivity which is second only to that of diamond. BAs single crystal demonstrates broad application prospects in electronics thermal management due to the unusually high thermal conductivity, and it becomes one of hotpots in the field of compound semiconductor materials. Great progress has been made in the growth of cubic BAs single crystal for the past few years. Ultrahigh thermal conductivity of 1 300 W·m-1·K-1 at room temperature is experimentally observed in high-quality BAs single crystal with millimeter-sized synthesized by chemical vapor transport (CVT) growth method. Undoped BAs is p-type conducting due to the existence of the intrinsic acceptor defects. The application prospects, crystal structure, material properties and crystal growth method of cubic BAs are introduced. The research progress in crystal growth is reviewed, the technical challenges of crystal growth is described, and development prospects are also analyzed. |
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| Keywords: | BAs conductivity compound semiconductor crystal growth chemical vapor transport |
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