| The effects of <sup>60</sup>Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
| |
| 引用本文： | 陈超,田本朗,刘兴钊,戴丽萍,邓新武,陈远富.The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors[J].中国物理 B,2012(7):600-602. |
| |
| 作者姓名： | 陈超 田本朗 刘兴钊 戴丽萍 邓新武 陈远富 |
| |
| 基金项目： | Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 50932002) |
| |
| 摘 要： | The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.
|
| 关 键 词： | AlGaN/GaN enhancement-mode high-electron-mobility transistors 60Co γ-ray irradiation |
| 本文献已被 维普 等数据库收录！ |
|
