InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage |
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| Authors: | Zhang Xiao-Bin Wang Xiao-Liang Xiao Hong-Ling Yang Cui-Bai Hou Qi-Feng Yin Hai-Bo Chen Hong and Wang Zhan-Guo |
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| Affiliation: | Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China; |
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| Abstract: | In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (Voc) of the device are 0.7 mA/cm2, 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of Voc compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing Voc of an In-rich InxGa1-xN solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well. |
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| Keywords: | InGaN solar cell multiple quantum wells |
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