| Multiple—Scattering of Near—Edge x—ray Absorption Fine Structure of Sulphur—Passivated InP（100） Surface |
| |
| 引用本文： | 曹松,唐景昌,沈少来,陈更生,马丹.Multiple—Scattering of Near—Edge x—ray Absorption Fine Structure of Sulphur—Passivated InP（100） Surface[J].中国物理快报,2003,20(7):1151-1154. |
| |
| 作者姓名： | 曹松 唐景昌 沈少来 陈更生 马丹 |
| |
| 作者单位： | [1]DepartmentofPhysics,Zhejianguniversity,Hangzhou310027 [2]DepartmentofPhysics,Zhejianguniversity,Hangzhou310027；StateKeyLaboratoryforSiliconMaterialScience,Zhejianguniversity,Hangzhou310027 |
| |
| 摘 要： | We use the multiple-scattering cluster method to calculated the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface.The physical origins of the resonances in the NEXAFS have been unveiled.It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms.The studies show that two S-S dimers with the bond lengths of 2.05A and 3.05A coexist in the surface,meanwhile the bridge and antibridge site adsorption of single S could not be ruled out.We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant discorder.
|
| 关 键 词： | Ⅲ－Ⅴ化合物半导体 扩展X射线吸收精细结构 多重散射 InP 磷化铟 砷化镓 光学性质 NEXAFS |
| 本文献已被 维普 等数据库收录！ |
|
