Raman scattering studies on manganese ion-implanted GaN |
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| Authors: | Xu Da-Qing Zhang Yi-Men Zhang Yu-Ming Li Pei-Xian Wang Chao |
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| Affiliation: | Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | This paper reports that the Raman spectra have been recorded on themetal-organic chemical vapour deposition epitaxially grown GaNbefore and after the Mn ions implanted. Several Raman defect modeshave emerged from the implanted samples. The structures around182 cm-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm-1 and 660 cm-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing atdifferent temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change andfull width at half maximum (FWHM) of the A1(LO) (733 cm-1) and EH2 (566 cm-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers. |
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| Keywords: | diluted magnetic semiconductors gallium nitride implantation Raman spectroscopy |
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