Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates |
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| Authors: | HuangLi XuWen-Yan QueYan-De MaoJin-Hai Meng Lei Pan Li-Da Li Geng Wang Ye-Liang Du Shi-Xuan Liu Yun-Qi Gao Hong-Jun |
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| Affiliation: | [1]Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications. |
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| Keywords: | graphene metal intercalation silicon intercalation scanning tunneling microscopy |
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