Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer |
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| Authors: | Tang Zhen-Jie Li Rong and Yin Jiang |
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| Affiliation: | [1]College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China [2]School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China [3]Department of Materials Science and Engineering, National Laboratory of Solid State Mierostructures, Nanjing University, Nanjing 210093, China |
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| Abstract: | A composition-modulated (HfO2)x (Al2O3)1-x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO2)x (Al2O3)1-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. |
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| Keywords: | composition modulated films memory device charge trap atomic layer deposition |
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