Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime |
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| Authors: | Yang Jing Zhao De-Gang Jiang De-Sheng Liu Zong-Shun Chen Ping Li Liang Wu Liang-Liang Le Ling-Cong Li Xiao-Jing He Xiao-Guang Wang Hui Zhu Jian-Jun Zhang Shu-Ming Zhang Bao-Shun and Yang Hui |
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| Affiliation: | [1]state Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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| Abstract: | The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p-i-n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polariza- tion in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm2 to 0.95 mA/cm2 by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells. |
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| Keywords: | nitride materials solar cell polarization |
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