Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers |
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| Authors: | Chen Jun Fan Guang-Han Zhang Yun-Yan Pang Wei Zheng Shu-Wen Yao Guang-Rui |
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| Affiliation: | 1. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;2. Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China;3. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China |
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| Abstract: | The performance of InGaN blue light-emitting diodes (LEDs) with different kinds of electron-blocking layers is investigated numerically. We compare the simulated emission spectra, electron and hole concentrations, energy band diagrams, electrostatic fields, and internal quantum efficiencies of the LEDs. The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer (EBL) has a strong spectrum intensity, mitigates efficiency droop, and possesses higher output power compared with the LEDs with the other three types of EBLs. These advantages could be because of the lower electron leakage current and more effective hole injection. The optical performance of the specifically designed LED is also improved in the case of large injection current. |
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| Keywords: | electron-blocking layer light-emitting diode internal quantum efficiency |
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