Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing |
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| Authors: | Chang Shao-Hui Liu Xue-Chao Huang Wei Xiong Ze Yang Jian-Hua Shi Er-Wei |
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| Affiliation: | Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China |
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| Abstract: | The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 ℃ for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing. |
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| Keywords: | Ti contact 6H-SiC HF acid H2 treatment |
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