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SPICE modeling of memristors with multilevel resistance states
Authors:Fang Xu-Dong  Tang Yu-Hua  Wu Jun-Jie
Affiliation:a National Laboratory for Parallel and Distributed Processing, School of Computer, National University of Defense Technology, Changsha 410073, China;b Department of Computer Science and Technology, School of Computer, National University of Defense Technology, Changsha 410073, China
Abstract:With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory (RRAM). Memristor's potential to store multiple bits of information as different resistance levels allows its application in multilevel cell (MCL) technology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis (SPICE) modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predicability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.
Keywords:memristor  multilevel cell  SPICE model
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