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| 基于液滴外延法的Al(In)纳米结构在GaAs(001)的形成机制 | |
| 引用本文： | 王一,李志宏,丁召,杨晨,罗子江,王继红,郭祥. 基于液滴外延法的Al(In)纳米结构在GaAs(001)的形成机制[J]. 人工晶体学报, 2021, 50(12): 2225-2231 |
| 作者姓名： | 王一 李志宏 丁召 杨晨 罗子江 王继红 郭祥 |
| 作者单位： | 贵州大学大数据与信息工程学院,贵阳 550025;教育部半导体功率器件可靠性工程中心,贵阳 550025;贵州大学大数据与信息工程学院,贵阳 550025;教育部半导体功率器件可靠性工程中心,贵阳 550025;贵州省微纳电子与软件技术重点实验室,贵阳 550025;贵州大学大数据与信息工程学院,贵阳 550025;贵州省微纳电子与软件技术重点实验室,贵阳 550025;贵州财经大学信息学院,贵阳 550025;贵州大学大数据与信息工程学院,贵阳 550025 |
| 基金项目： | 国家自然科学基金(62065003);贵州省自然科学基金(QKH-[2020]1Y271);教育部半导体功率器件可靠性研究中心开放项目(ERCMEKFJJ2019-(08)) |
| 摘 要： | 采用液滴外延法在GaAs(001)衬底上同时沉积In、Al液滴形成纳米结构,利用原子力显微镜(AFM)对实验样品进行形貌表征,并通过X射线光电子能谱(XPS)与扫描电子显微镜分析In、Al组分比样品表面元素分布。实验结果显示,混合沉积后的表面InAlAs纳米结构密度随着In组分的降低而降低,而单个纳米结构的尺寸变大。SEM与XPS测试结果证明表面的In并没有因为衬底温度过高而全部偏析。根据实验结果推测,In&Al液滴同时沉积到表面形成InAl混合液滴。当液滴完全晶化后纳米结构中心出现孔洞,而产生这一现象的主要原因是液滴向下刻蚀。 |
| 关 键 词： | In&Al混合液滴 GaAs 液滴外延 表面扩散 分子束外延 纳米结构 |
| 收稿时间： | 2021-08-20 |
Study on the Formation Mechanism of Al(In) Nanostructures on GaAs(001) by Droplet Epitaxy |
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| WANG Yi,LI Zhihong,DING Zhao,YANG Chen,LUO Zijiang,WANG Jihong,GUO Xiang. Study on the Formation Mechanism of Al(In) Nanostructures on GaAs(001) by Droplet Epitaxy[J]. Journal of Synthetic Crystals, 2021, 50(12): 2225-2231 | |
| Authors: | WANG Yi LI Zhihong DING Zhao YANG Chen LUO Zijiang WANG Jihong GUO Xiang |
| Affiliation: | 1. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;2. Power Semiconductor Device Reliability Engineering Center of the Ministry of Education, Guiyang 550025, China;3. Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province, Guiyang 550025, China;4. College of Information, Guizhou University of Finance and Economics, Guiyang 550025, China |
| Abstract: | The indium and aluminum droplets were simultaneously grown on GaAs (001) substrate by droplet epitaxy method. The morphology of the samples with different indium and aluminum components was characterized by atomic force microscopy (AFM), and the distribution of elements on the surface was observed by XPS and scanning electron microscope (SEM). Results show that the density of InAlAs nanostructures on the surface of mixed deposition decreases with the decreases of indium composition, while the size of individual nanostructures increases. The experimental results show that the density of surface InAlAs nanostructures after hybrid deposition decreases with indium component decreasing, while the size of individual nanostructures becomes larger. SEM and XPS test results prove that the indium on the surface is not all segregated due to the high substrate temperature. It is speculated from the experimental results that when indium & aluminum droplets are deposited on the surface, a mixed indium & aluminum droplet is formed. The formation of dips in the center of the nanostructures formed after complete crystallization of the droplets is mainly due to the downward etching of droplets. |
| Keywords: | indium & aluminum droplet GaAs droplet epitaxy surface diffusion MBE nanostructure |
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