| Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly （3-Hexylthiophene） Films |
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| 引用本文： | 马良.Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly （3-Hexylthiophene） Films[J].中国物理快报,2010,27(12):203-206. |
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| 作者姓名： | 马良 |
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| 作者单位： | Department of Chemistry and Chemical Engineering, Minjiang University, Fuzhou 350108 |
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| 基金项目： | Supported by the Technological Project of Fujian Province under Grant No JA10225. |
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| 摘 要： | The effect of annealing on the microstructure and electrical characteristics of poly （3-hexylthiophene） （P3HT） films doped with very small amounts of the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4-TCNQ） is studied. X-ray diffraction and UV-vis spectrum studies show that unlike the pure P3HT film, the thermal treatment on the doped fihns under an Ar atmosphere can effectively enhance the crystalline order of P3HT films, as well as successfully facilitate the orientation of the polymer chains. This improvement is attributed to the electrostatic force between P3HT and F4-TCNQ molecules. This force induces the polymer chains to crystallize and orient during the annealing process. As a result, annealing significantly improves performance, especially for the Ion/Ioff ratio of the TFTs based on the doped P3HT films.
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| 关 键 词： | 掺杂特性 退火工艺 薄膜电极 电学特性 显微组织 噻吩 己基 紫外可见光谱 |
| 收稿时间： | 2010-8-9 |
Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly (3-Hexylthiophene) Films |
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| MA Liang.Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly (3-Hexylthiophene) Films[J].Chinese Physics Letters,2010,27(12):203-206. |
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| Authors: | MA Liang |
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| Affiliation: | MA Liang(Department of Chemistry and Chemical Engineering, Minjiang University, Fuzhou 350108) |
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