Electronic transport for armchair graphene nanoribbons with a potential barrier |
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Authors: | Zhou Ben-Hu Duan Zi-Gang Zhou Ben-Liang Zhou Guang-Hui |
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Affiliation: | Department of Physics, Hunan Normal University, Changsha 410081, China; Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China |
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Abstract: | This paper studies the electronic transport propertythrough a square potential barrier in armchair-edge graphenenanoribbon (AGNR). Using the Dirac equation with the continuitycondition for wave functions at the interfaces between regions withand without a barrier, we calculate the mode-dependent transmissionprobability for both semiconducting and metallic AGNRs,respectively. It is shown that, by some numerical examples, thetransmission probability is generally an oscillating function of theheight and range of the barrier for both types of AGNRs. The maindifference between the two types of systems is that the magnitude ofoscillation for the semiconducting AGNR is larger than that forthe metallic one. This fact implies that the electronic transportproperty for AGNRs depends sensitively on their widths and edgedetails due to the Dirac nature of fermions in the system. |
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Keywords: | armchair-edge graphene nanoribbon potential barrier electronic transport |
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