| Formation of rippled surface morphology during Si/Si （100） epitaxy by ultrahigh vacuum chemical vapour deposition |
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| 引用本文： | 胡炜玄,成步文,薛春来,苏少坚,王启明.Formation of rippled surface morphology during Si/Si （100） epitaxy by ultrahigh vacuum chemical vapour deposition[J].中国物理 B,2011,20(12):126801-126801. |
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| 作者姓名： | 胡炜玄 成步文 薛春来 苏少坚 王启明 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the Major State Basic Research Program of China (Grant No. 2007CB613404), the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415), the National Natural Science Foundation of China (Grant Nos. 60676005, 61036003, and 60906035), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01). |
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| 摘 要： | The Si epitaxial films are grown on Si (100) substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature Tg are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with Tg increasing from 650 ℃ to 700 ℃. Rippled surface morphologies are observed at Tg = 700 ℃, 730 ℃, and 800 ℃, but disappear when Tg = 750 ℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.
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| 关 键 词： | 超高真空化学气相沉积 表面形貌 硅（100） 外延硅 化学气相沉积技术 Si（100） 生长温度 硅外延片 |
| 收稿时间： | 2011-02-17 |
Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition |
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| Hu Wei-Xuan,Cheng Bu-Wen,Xue Chun-Lai,Su Shao-Jian and Wang Qi-Ming.Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J].Chinese Physics B,2011,20(12):126801-126801. |
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| Authors: | Hu Wei-Xuan Cheng Bu-Wen Xue Chun-Lai Su Shao-Jian and Wang Qi-Ming |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The Si epitaxial films are grown on Si (100) substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature Tg are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with Tg increasing from 650 ℃ to 700 ℃. Rippled surface morphologies are observed at Tg = 700 ℃, 730 ℃, and 800 ℃, but disappear when Tg = 750 ℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth. |
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| Keywords: | step-bunching Ehrlich-Chwoebel barrier elastic repulsion fluctuation |
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