| SiC光导开关衬底与电极界面场强仿真与优化设计 |
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| 引用本文： | 罗燕,丁蕾,赵毅,姚崇斌,王立春.SiC光导开关衬底与电极界面场强仿真与优化设计[J].强激光与粒子束,2022,34(6):063004-1-063004-6. |
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| 作者姓名： | 罗燕 丁蕾 赵毅 姚崇斌 王立春 |
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| 作者单位： | 上海航天电子通讯设备研究所, 上海 201109 |
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| 基金项目： | 国防科工局基础科研项目 |
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| 摘 要： | 研究电极结构、SiC与电极连接结构对界面场强的影响，通过电极边缘以及SiC晶体结构的优化降低界面处的电场增强，并通过高压试验测试优化电极结构的击穿电压。结果表明，优化电极倒角以及SiC晶体与电极的界面下埋可有效降低电场增强，在电极为圆倒角及界面使用焊料连接的结构下，使用介质环的器件在电压22 kV时击穿。
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| 关 键 词： | 光导半导体 SiC开关 电极 界面 击穿场强 |
| 收稿时间： | 2021-08-20 |
Optimization design and simulation of electric field at interface between substrate and electrode of photoconductive switch |
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| Affiliation: | Shanghai Aerospace Electronic and Communication Equipment Research Institute, Shanghai 201109, China |
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| Abstract: | Photoconductive switch can be used in high power microwave system. The breakdown resistance field strength of SiC photoconductive switches is mainly limited by packaging. The packaging method cannot effectively solve the problem of electric field accumulation when the copper electrode leaves the SiC substrate, which leads to the application field strength of SiC far lower than the breakdown resistance strength of SiC crystal. The effects of the structure of the electrode and the connection structure of SiC to the electrode on the interfacial field intensity are studied. The electric field enhancement at the interface is reduced by optimizing the edge of the electrode and the SiC crystal structure. The breakdown voltage of optimized electrode structure is tested. The results show that the electric field enhancement can be effectively reduced by optimizing the electrode chamfering and burying under the interface between SiC crystal and electrode. Under the structure of circular chamfering and interface connecting with solder, the SiC photoconductive switch breaks down at the voltage of 22 kV. |
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