A novel structure of a high current gain 4H-SiC BJT with a buried layer in base |
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| Authors: | Zhang You-Run Zhang Bo Li Zhao-Ji Deng Xiao-Chuan Liu Xi-Ling |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic[1.8mm] Science and Technology of China, Chengdu 610054, China |
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| Abstract: | In this paper, a new structure of a 4H-SiC bipolar junction transistor(BJT) with a buried layer (BL) in the base is presented. The current gainshows an approximately 100% increase compared with that of theconventional structure. This is attributed to the creation of a built-inelectric field for the minority carriers to transport in the basewhich is explained based on 2D device simulations. The optimizeddesign of the buried layer region is also considered by numericsimulations. |
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| Keywords: | 4H-SiC bipolar junctiontransistor (BJT) buried layer current gain |
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