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Influence of thermal stress on the relative permittivity of the A1GaN barrier layer in an A1GaN/GaN heterostructure Schottky contacts
Authors:Lu Yuan-Jie Lin Zhao-Jun Zhang Yu Meng Ling-Guo Cao Zhi-Fang Luan Chong-Biao Chen Hong and Wang Zhan-Guo
Affiliation:[1]School of Physics, Shandong University, Jinan 250100, China [2]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [3]Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:
Keywords:A1GaN/GaN heterostructures  relative permittivity of A1GaN barrier layer  conversepiezoelectric effect
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