Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation |
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| Affiliation: | 1.School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;2.Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences(CAS), Suzhou 215123, China;3.Suzhou Nanowin Science and Technology Co., Ltd, Suzhou 215123, China |
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| Abstract: | The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed. |
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| Keywords: | GaN dislocation nanoindentation cathodoluminescence TEM |
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