| Growth and characterization of GaAs/In_χGa_(1-χ)As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces |
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| 引用本文： | 吕晓龙,张霞,刘小龙,颜鑫,崔建功,李军帅,黄永清,任晓敏.Growth and characterization of GaAs/In_χGa_(1-χ)As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces[J].中国物理 B,2013(6). |
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| 作者姓名： | 吕晓龙 张霞 刘小龙 颜鑫 崔建功 李军帅 黄永清 任晓敏 |
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| 基金项目： | supported by the National Basic Research Program of China (Grant No. 2010CB327600);the National Natural Science Foundation of China (Grant Nos. 61020106007 and 61077049);the International Science & Technology Cooperation Program of China (Grant No. 2011DFR11010);the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20120005110011);the 111 Program of China (Grant No. B07005) |
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| 摘 要： | We report on the Au-assisted vapour-liquid-solid(VLS) growth of GaAs/InxGa1-xAs/GaAs(0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs(111) B substrates via the metal-organic chemical vapor deposition(MOCVD) technique.The influence of the indium(In) content in an Au particle on the morphology of nanowires is investigated systematically.A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment,coupled with a group III precursor interruption,is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section.The nanowire morphology,such as kinking and tapering,are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.
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