Fully transparent nonvolatile resistive polymer memory |
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| Authors: | Hwan‐Chul Yu Moon Young Kim Jeong‐Sup Lee Kwang‐Hun Lee Kyoung Koo Baeck Kyoung‐Kook Kim Soohaeng Cho Chan‐Moon Chung |
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| Affiliation: | 1. Department of Chemistry, Yonsei University, Wonju, Gangwon‐Do, Republic of Korea;2. Department of Physics, Yonsei University, Wonju, Gangwon‐Do, Republic of Korea;3. Department of Chemistry, Gangneung‐Wonju National University, Gangneung, Gangwon‐Do, Republic of Korea;4. Department of Nano‐Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi‐Do, Republic of Korea |
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| Abstract: | We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene‐containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write‐once‐read‐many times (WORM) memory behavior with an ON/OFF current ratio of ～2 × 103, and the ratio remained without any significant degradation for over 104 s. The memory behavior of the device is considered to be governed by trap‐controlled space‐charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 918–925 |
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| Keywords: | anthracene filament formation films partially aliphatic polyimide polyimides SCLC transparency transparent memory device WORM |
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