| INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION |
| |
| 引用本文： | 张道范,朱镛,杨华光,马文漪,顾本源.INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION[J].物理学报(海外版),1994,3(3):176-181. |
| |
| 作者姓名： | 张道范 朱镛 杨华光 马文漪 顾本源 |
| |
| 作者单位： | Institute of Physics, Academia Sinica, Beijing 100080, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China. |
| |
| 摘 要： | In this paper the influence of γ-radiation on the dielectric constants of Rb2ZnCl4 crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, Tc, between the INC and C phases is not changed, but the peak value of the dielectric constant at Tc increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.
|
| 收稿时间： | 1993-08-12 |
INFLUENCE OF $\gamma$-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION |
| |
| Affiliation: | Institute of Physics, Academia Sinica, Beijing 100080, China |
| |
| Abstract: | In this paper the influence of $\gamma$-radiation on the dielectric constants of Rb2ZnCl4 crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with $\gamma$-radiation or not. For the $\gamma$-irradiated sample, its transition point, Tc, between the INC and C phases is not changed, but the peak value of the dielectric constant at Tc increases abruptly, compared with that before $\gamma$-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from $\gamma$-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples. |
| |
| Keywords: | |
|
| 点击此处可从《物理学报(海外版)》浏览原始摘要信息 |
|
点击此处可从《物理学报(海外版)》下载免费的PDF全文 |
|
