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CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION |
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| Authors: | Zhang Yong-ping Gu You-song Chang Xiang-rong Tian Zhong-zhuo Shi Dong-xi Zhang Xiu-fang and Yuan Lei |
| Affiliation: | Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China; Beijing Laboratory of Vacuum Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
| Abstract: | The crystalline carbon nitride thin films have been prepared on Si (100) substrates using microwave plasma chemical vapor deposition technique. The experimental X-ray diffraction pattern of the films prepared contain all the strong peaks of $\alpha$-C3N4 and $\beta$-C3N4, but most of the peaks are overlapped.The films are composed of $\alpha$-C3N4 and $\beta$-C3N4. The N/C atomic ratio is close to the stoichiometric value 1.33. X-ray photoelectron spectroscopic analysis indicated that the binding energies of C 1s and N 1s are 286.43eV and 399.08 eV respectively. The shifts are attributed to the polarization of C-N bond. Both observed Raman and Fourier transform infrared spectra were compared with the theoretical calculations. The results support the existence of C-N covalent bond in $\alpha$- and $\beta$-C3N4 mixture. |
| Keywords: | carbon nitride microwave plasma chemical vapor deposition (MPCVD) thin film |
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