High-Efficiency Saturated Red Bilayer Light-Emitting Diodes: Comparative Studies with Devices from Blend of the Same Light-Emitting Polymers |
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引用本文: | 章勇,侯琼,莫越奇,彭俊彪,曹镛.High-Efficiency Saturated Red Bilayer Light-Emitting Diodes: Comparative Studies with Devices from Blend of the Same Light-Emitting Polymers[J].中国物理快报,2006,23(4):1015-1018. |
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作者姓名: | 章勇 侯琼 莫越奇 彭俊彪 曹镛 |
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作者单位: | [1]Institute of Polymer Optoelectronie Material and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640 [2]Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 [3]Department of Chemistry, South China Normal University, Guangzhou 510631 |
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基金项目: | Supported by the National Key Basic Research and Development Programme of China under Grant No 2002CB613405, and the National Natural Science Foundation of China under Grant No 50433030. |
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摘 要: | High-efficient saturated red light-emitting diodes are realized based on a bilayer of phenyl-substituted poly p- phenylene vinylene] derivative (P-PPV) and copolymer (PFO-DBT15) of 9,9-dioctylfluorene (DOFF) and 4,7-di- 2-thienyl-2,1,3-benzothiadiazole (DBT). External electrolurninescent (EL) quantum efficiency of PFO-DBT15 is increased from 1.6% for a single-layer device to 4.7% for the bilayer device by insertion of a P-PPV layer between PEDOT (polyethylene dioxythiophene-polystyrene sulfonic acid) and PFFO-DBT15 at the current density of 35 mA/cm^2. The luminescence efficiency reaches 0.83 cd/A, and the Commission Internationale de PEelairage coordinates (CIE) become nearly x = 0.700 and y = 0.300. In comparison with the devices from PFFO-DBT15 and P-PPV blend films, the P-PPV/PFO-DBT15 bilayer device shows higher EL quantum efficiency and better stability under high current density, The improved device performance can be attributed to the charge-confinement effect at the interface of the P-PPV/PFO-DBT15 bilayer structure.
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关 键 词: | 发光二极管 渗透红色双分子层 发光聚合物 高效率 量子效应 |
收稿时间: | 2005-12-29 |
修稿时间: | 2005-12-29 |
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