| Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films |
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| 引用本文： | 秦羽丰,颜世申,萧淑琴,李强,代正坤,沈婷婷,杨爱春,裴娟,康仕寿,代由勇,刘国磊,陈延学,梅良模.Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films[J].中国物理 B,2013(5):509-513. |
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| 作者姓名： | 秦羽丰 颜世申 萧淑琴 李强 代正坤 沈婷婷 杨爱春 裴娟 康仕寿 代由勇 刘国磊 陈延学 梅良模 |
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| 基金项目： | Project supported by the Young Scientists Fund of the National Natural Science Foundation of China （Grant No. 11204164）, the National Natural Science Foundation of China （Grant No. 11174184）, the National Basic Research Program of China （Grants Nos. 2013CB922303 and 2009CB929202）, and the National Funds for Distinguished Young Scholars of China （Grant No. 51125004）. |
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| 摘 要： |
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| 关 键 词： | 半导体膜 铁磁性 矫顽力 半导体薄膜 振动 负极 正极 磁控共溅射 |
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