The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells |
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| Affiliation: | [1]state Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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| Abstract: | InGaN/GaN p-i-n solar cells,each with an undoped In0.12Ga0.88N absorption layer,are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition.The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed,and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance.An optimized InGaNbased solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported.The full width at half maximum of the rocking curve of the(0002) InGaN layer is 180 arcsec. |
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| Keywords: | nitride materials crystal growth solar cell X-ray diffraction |
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