Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device |
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| Authors: | Hong Xue-Kun Yang Xi-Feng Feng Jin-Fu and Liu Yu-Shen |
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| Affiliation: | Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500, China |
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| Abstract: | We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage. This device possesses a nonresonant tunneling channel and two resonant tunneling channels. The Keldysh nonequilibrium Green's function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot. We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient. This result is attributed to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region. Importantly, an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages. Therefore, the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot. |
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| Keywords: | Rashba quantum dot spin polarization spin accumulation temperature gradient |
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