Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence |
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| Authors: | Geng Chao Liu Jie Xi Kai Zhang Zhan-Gang Gu Song Hou Ming-Dong Sun You-Mei Duan Jing-Lai Yao Hui-Jun and Mo Dan |
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| Affiliation: | [1]Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China [2]University of Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence. |
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| Keywords: | Geant4 multiple-bit upset （MBU） critical charge spacing between adjacent cells |
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