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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method |
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| Authors: | Pongthavornkamol Tiwat Pang Lei Yuan Ting-Ting Liu Xin-Yu |
| Affiliation: | Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Abstract: | AlGaN/GaN HEMT RF drain–source current RF dispersion effect power-added efficiency |
| Keywords: | AlGaN/GaN HEMT RF drain–source current RF dispersion effect power-added efficiency |
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