| 基于金/硅纳米线阵列肖特基结的自驱动式的可见-近红外光探测器性能研究 |
| |
| 引用本文： | 洪清水,曹阳,孙家林,万平玉,贺军辉.基于金/硅纳米线阵列肖特基结的自驱动式的可见-近红外光探测器性能研究[J].影像科学与光化学,2014,32(6):532-541. |
| |
| 作者姓名： | 洪清水 曹阳 孙家林 万平玉 贺军辉 |
| |
| 作者单位： | 1. 北京化工大学 理学院, 北京 100029;
2. 中国科学院 理化技术研究所 微纳材料与技术研究中心 功能纳米材料实验室, 北京 100190;
3. 清华大学 物理系 低维量子物理国家重点实验室, 北京 100084 |
| |
| 基金项目： | 国家自然科学基金，973重大科学研究计划，863高技术研究与发展计划，清华大学低维量子物理国家重点实验室开放基金 |
| |
| 摘 要： | 本文成功构筑了金/硅纳米线(Au/SiNWs)阵列自驱动式可见-近红外光探测器.探测器在暗态时表现出良好的二极管整流特性,在±1 V偏压下,整流比达584.在可见-近红外光照下,光探测器具有明显的光生伏特效应.光探测性能研究表明:当无外加偏压时,探测器对波长为405 nm、532 nm和1064 nm的光源具有较高的响应率,并且响应快速、信号稳定,重现性良好;当给器件施加一个很小的正偏压时,通过暗态和照光的切换,探测器可使外电路中的电流快速地正负交替变化,从而实现一种快速、有效的二进制光响应.自驱动式Au/SiNWs阵列光探测器显示了高灵敏、快速、宽光谱响应特性,具有巨大的应用前景.
|
| 关 键 词： | 自驱动 可见-近红外光探测 肖特基结 硅纳米线阵列 |
| 收稿时间： | 2014-03-29 |
High-performance Visible and Near-infrared Photodetector Based on Au/Silicon Nanowires Array Schottky Photodiode |
| |
| HONG Qingshui,CAO Yang,SUN Jialin,WAN Pingyu,HE Junhui.High-performance Visible and Near-infrared Photodetector Based on Au/Silicon Nanowires Array Schottky Photodiode[J].Imaging Science and Photochemistry,2014,32(6):532-541. |
| |
| Authors: | HONG Qingshui CAO Yang SUN Jialin WAN Pingyu HE Junhui |
| |
| Affiliation: | 1. College of Science, Beijing University of Chemical Technology, Beijing 100029, P.R.China;
2. Functional Nanomaterials Laboratory, Center for Micro/Nanomaterials and Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R.China;
3. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P.R.China |
| |
| Abstract: | Self-powered visible and near-infrared photodetector based on Au/silicon nanowires array Schottky photodiode (SPD) was fabricated. The as-fabricated SPD exhibited excellent rectification characteristics with a rectification ratio up to 584 within ±1 V in the dark and significant photovoltaic (PV) effects under visible and near-infrared light illuminations. Photodetection analysis revealed that the SPD was highly sensitive to illumination of 405 nm, 532 nm and 1064 nm with good stability, reproducibility and fast response speed at zero bias voltage. Meanwhile, the SPD could provide a rapid binary-response of positive current to negative current switch upon illumination at a small forward bias. The current work demonstrates that the self-powered Au/silicon nanowires SPD would have a bright application prospect in self-powered optoelectronic systems. |
| |
| Keywords: | self-powered visible and near-infrared detection Schottky photodiode silicon nanowires array |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《影像科学与光化学》浏览原始摘要信息 |
|
点击此处可从《影像科学与光化学》下载全文 |
|
