| Hot carrier injection degradation under dynamic stress |
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| 作者姓名： | 马晓华 曹艳荣 郝跃 张月 |
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| 作者单位： | School of Technical Physics,Xidian University School of Electronical & Machanical Engineering,Xidian University Key Lab of Wide Band-Gap Semiconductor Materials and Devices |
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| 基金项目： | Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the grant from the Major State Basic Research Development Program of China (973 Program, No. 2011CB309606), and the Fundamental Research Funds |
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| 摘 要： | In this paper,we have studied hot carrier injection(HCI) under alternant stress.Under different stress modes,different degradations are obtained from the experiment results.The different alternate stresses can reduce or enhance the HC effect,which mainly depends on the latter condition of the stress cycle.In the stress mode A(DC stress with electron injection),the degradation keeps increasing.In the stress modes B(DC stress and then stress with the smallest gate injection) and C(DC stress and then stress with hole injection under V g = 0 V and V d = 1.8 V),recovery appears in the second stress period.And in the stress mode D(DC stress and then stress with hole injection under V g = 1.8 V and V d = 1.8 V),as the traps filled in by holes can be smaller or greater than the generated interface states,the continued degradation or recovery in different stress periods can be obtained.
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| 关 键 词： | hot carrier injection alternate stress recovery degradation |
| 收稿时间： | 2010-08-20 |
Hot carrier injection degradation under dynamic stress |
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| Ma Xiao-Hu,Cao Yan-Rong,Hao Yue and Zhang Yue.Hot carrier injection degradation under dynamic stress[J].Chinese Physics B,2011,20(3):37305-037305. |
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| Authors: | Ma Xiao-Hu Cao Yan-Rong Hao Yue and Zhang Yue |
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| Affiliation: | School of Technical Physics, Xidian University, Xi'an 710071, China;School of Electronical & Machanical Engineering, Xidian University, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| Abstract: | In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0 V and Vg=1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg=-1.8 V and Vd=1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained. |
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| Keywords: | hot carrier injection alternate stress recovery degradation |
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