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超长定向含铁多壁碳纳米管阵列的制备
引用本文:张继成,马康夫,付志兵,周民杰,李佳,吴卫东,唐永建.超长定向含铁多壁碳纳米管阵列的制备[J].强激光与粒子束,2013,25(5):1161-1165.
作者姓名:张继成  马康夫  付志兵  周民杰  李佳  吴卫东  唐永建
作者单位:1.中国工程物理研究院 激光聚变研究中心, 四川 绵阳 621 900
摘    要:采用无模板化学气相沉积法,以二茂铁为催化剂,二甲苯为碳源,利用单温炉加热装置制备了定向碳纳米管阵列。运用扫描电子显微镜、透射电子显微镜、拉曼光谱和X射线衍射仪等对定向碳纳米管阵列的形貌、成分和物相进行细致的分析和表征。结果表明:制得的碳纳米管阵列具有良好的定向性和多壁管状结构,并且石墨化程度高;碳纳米管中除碳元素外,管中包含有少量以纳米颗粒和纳米线形式存在的铁及其化合物,主要成分是铁和碳化铁。结合碳纳米管的制备和透射电子显微镜分析表征结果,认为超长碳纳米管阵列的生长模式为底部生长方式,即经历催化剂分解、催化、成核、长大、中毒、凝聚成粒和连接成线的循环过程,正是由于碳源和催化剂的连续供应促成了碳纳米管阵列的快速定向生长。

关 键 词:碳纳米管阵列    快速生长    生长机制    化学气相沉积
收稿时间:2012-10-23;

Synthesis of long aligned iron-encapsuled multiwall carbon nanotube array
Zhang Jicheng,Ma Kangfu,Fu Zhibing,Zhou Minjie,Li Jia,Wu Weidong,Tang Yongjian.Synthesis of long aligned iron-encapsuled multiwall carbon nanotube array[J].High Power Laser and Particle Beams,2013,25(5):1161-1165.
Authors:Zhang Jicheng  Ma Kangfu  Fu Zhibing  Zhou Minjie  Li Jia  Wu Weidong  Tang Yongjian
Affiliation:1.Research Center of Laser Fusion,CAEP,P.O.Box 919-987,Mianyang 621900,China
Abstract:Multiwall carbon nanotubes (MWCNTs) encapsuled with iron nanowires were fabricated by chemical vapor deposition (CVD) methods in furnace using ferrocene and xylene as catalyzer and carbon source. The MWCNTs were characterized by scanning electron microscope, transmission electron microscopy, X-ray diffraction and Raman spectroscopy. The results indicate that the MWCNTs have good alignment and fine multilayer graphite form, and a small number of iron(Fe) catalyzer nanowires and nanoparticles remaining in the MWCNTs consist of Fe and Fe3C, which are the outcomes of continuous supply of carbon source and iron catalyst particles. According to the synthesis process and characterization results, the possible growth mechanism of the MWCNTs is believed to accord with the base-growth model, which follows the cyclic process of catalyst nucleation on the open ends of MWCNTs from active gas phase cluster and then diffusion and formation of particles along inner surface of MWCNTs.
Keywords:fast growth  growth mechanism  chemical vapor deposition
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