Silicon-on-nothing MOSFETs fabricated with hydrogenand helium co-implantation |
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| Authors: | Bu Wei-Hai Huang Ru Li Ming Tian Yu Wu Da-Ke Chan Man-Sun and Wang Yang-Yuan |
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| Affiliation: | Institute of Microelectronics, Peking University,Beijing 100871, China; Department of Electrical & Electronic Engineering,Hong Kong University of Science & Technology, Hong Kong, China |
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| Abstract: | In this paper, a method to fabricate Silicon-on-Nothing (SON) MOSFETs using
H$^{ + }$ and He$^{ + }$ co-implantation is presented. The technique is
compatible with conventional CMOS technology and its feasibility has been
experimentally demonstrated. SON MOSFETs with 50nm gate length have been
fabricated. Compared with the corresponding bulk MOSFETs, the SON MOSFETs
show higher on current, reduced leakage current and lower subthreshold
slope. |
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| Keywords: | Silicon-on-Insulator (SOI) SON hydrogen and helium co-implantation |
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