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Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm |
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| Affiliation: | 1.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China |
| Abstract: | We report on the resonance fluorescence (RF) from single InAs quantum dots (QDs) emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RF. Rabi oscillation with more than one period is observed through the picosecond (ps) pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band. |
| Keywords: | quantum dots resonance fluorescence single photons Rabi oscillation |
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