Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices |
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| Affiliation: | 1.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3.Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | In this paper, we demonstrate bias-selectable dual-band short- or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2 μm and 3.6 μ m, respectively. At 200 K, the short-wave channel exhibits a peak quantum efficiency of 42% and a dark current density of 5.93×10-5 A/cm2 at 500 mV, thereby providing a detectivity of 1.55×1011 cm·Hz1/2/W. The mid-wave channel exhibits a peak quantum efficiency of 31% and a dark current density of 1.22×10-3 A/cm2 at -300 mV, thereby resulting in a detectivity of 2.71×1010 cm·Hz1/2/W. Moreover, we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure. |
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| Keywords: | short-/mid-wavelength InGaAsSb InAs/GaSb |
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