| Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique |
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| 引用本文： | 谭立英,黎发军,谢小龙,周彦平,马晶.Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique[J].中国物理 B,2017,26(8):86201-086201. |
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| 作者姓名： | 谭立英 黎发军 谢小龙 周彦平 马晶 |
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| 作者单位： | National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China |
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| 摘 要： | To gain a physical insight into the radiation effect on nanowires(NWs), the time resolved photoluminescence(TRPL)technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10~(12) cm~(-2) to 3.0 × 10~(13) cm~(-2). It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall(SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.
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| 收稿时间： | 2017-02-27 |
Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique |
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| Affiliation: | National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | To gain a physical insight into the radiation effect on nanowires (NWs), the time resolved photoluminescence (TRPL) technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core-shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0×1012 cm-2 to 3.0×1013 cm-2. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley-Read-Hall (SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime. |
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| Keywords: | radiation effect minority carrier lifetime defect concentration radiation damage |
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