A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells |
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| Authors: | Hossein Movla Mohammad Babazadeh |
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| Affiliation: | Azar Aytash Co., Technology Incubator, University of Tabriz, Tabriz, Iran |
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| Abstract: | In this study, we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM). Organic semiconductors are also known to be not pure and they have defects and impurities, some of them are being charged and act as p-type or n-type dopants. Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings (Nd) that consist of 5×1017 cm-3, 1018 cm-3, and 5×1018 cm-3. We perform the analysis of the doping concentration through the drift-diffusion model, and calculate the current and voltage doping dependency. We find that at three different n-dopant levels, optimum p-type doping is about Np=6×1018 cm-3. Simulation results have shown that by increasing doping level, Voc monotonically increases by doping. Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at Np=3×1018 cm-3. Moreover, this paper demonstrates that the optimum value for the p-doping is about Np=6×1018 cm-3 and optimum value for n-dopant is Nd=1018 cm-3, respectively. The simulated results confirm that doping considerably affects the performance of organic solar cells. |
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| Keywords: | organic photovoltaics charge transport doping finite difference method |
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