Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions |
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| Affiliation: | 1.State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;2.Sichuan Vocational and Technical College of Communications, Chengdu 611130, China |
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| Abstract: | Chemical disorder on the surface and lattice strain in GaN implanted by Fe10+ ions are investigated. In this study, 3-MeV Fe10+ ions fluence ranges from 1×1013 ions/cm2 to 5×1015 ions/cm2 at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane. |
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| Keywords: | GaN ion implantation chemical disorder lattice strain microstructure |
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