| INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS β-SIC |
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| 引用本文： | 廖良生,鲍希茂,李宁生,杨志峰,闵乃本.INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS β-SIC[J].物理学报(海外版),1995,4(10):783-789. |
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| 作者姓名： | 廖良生 鲍希茂 李宁生 杨志峰 闵乃本 |
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| 作者单位： | Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China, and in part by the Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica. |
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| 摘 要： | Crystal Si were implanted with different doses of C+ from 1011 to 1017 cm-2 at an energy of 50 keV. β-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C+ dose ≥1015 cm-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C+ dose increases; the samples with C+ dose ≤1014 cm-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of β-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous β-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission.
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| 收稿时间： | 1995-01-24 |
INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS $\beta$-SIC |
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| Affiliation: | Department of Physics and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 , China |
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| Abstract: | Crystal Si were implanted with different doses of C+ from 1011 to 1017 cm-2 at an energy of 50 keV. $\beta$-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C+ dose ≥1015 cm-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C+ dose increases; the samples with C+ dose ≤1014 cm-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of $\beta$-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous $\beta$-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission. |
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