首页 | 官方网站   微博 | 高级检索  
     


Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs
Authors:DENG Hui-Xiong  JIANG Xiang-Wei  TANG Li-Ming
Affiliation:[1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 [2]Department of Applied Physics, Hunan University, Changsha 410082
Abstract:
Keywords:
本文献已被 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号