A Solution‐Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small‐Molecule‐Based High‐Performance Ternary Electronic Memory Devices |
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| Authors: | Dr Chun‐Ting Poon Dr Di Wu Dr Wai Han Lam Prof?Dr Vivian Wing‐Wah Yam |
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| Affiliation: | Institute of Molecular Functional Materials (Area of Excellence Scheme, University Grants Committee, Hong Kong) and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong (P.R. China) |
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| Abstract: | A novel small‐molecule boron(III)‐containing donor–acceptor compound has been synthesized and employed in the fabrication of solution‐processable electronic resistive memory devices. High ternary memory performances with low turn‐on (VTh1=2.0 V) and distinct threshold voltages (VTh2=3.3 V), small reading bias (1.0 V), and long retention time (>104 seconds) with a large ON/OFF ratio of each state (current ratio of “OFF”, “ON1”, and “ON2”=1:103:106) have been demonstrated, suggestive of its potential application in high‐density data storage. The present design strategy provides new insight in the future design of memory devices with multi‐level transition states. |
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| Keywords: | boron donor– acceptor systems organic electronics ternary memory devices |
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