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Piezoelectricity in two‐dimensional group III–V buckled honeycomb monolayers
Authors:Ruilong Gao  Yiyuan Gao
Affiliation:1. +8629 82202550+862982202550;2. Xi'an University of Architecture and Technology, Xi'an, P.R. China
Abstract:We studied the elastic and piezoelectric properties of buckled honeycomb group III–V monolayers (GaP, GaAs, GaSb, InP, InAs and InSb) by DFT calculations. Those buckled monolayers are ferroelectric and have nonzero e11, e31, d11 and d31 piezoelectric coefficients. Our calculations show that those monolayers are good piezoelectric materials and a pronounced periodic trend of the piezoelectric coefficients e11, e31, d11 and d31 was found. Group III–V monolayers are promising candidates for future atomically thin piezoelectric applications such as transducers, sensors, and energy harvesting devices.
Keywords:density functional theory  piezoelectricity  honeycomb monolayers  two‐dimensional materials  III−  V binary compounds
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