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First principles simulation technique for characterizing single event effects |
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| Authors: | Zhang Ke-Ying Guo Hong-Xi Luo Yin-Hong Fan Ru-Yu Chen Wei Lin Dong-Sheng Guo Gang and Yan Yi-Hua |
| Affiliation: | Northwest Institute of Nuclear Techniques, Xi'an 710024, China; China Institute of Atomic Energy, Beijing 102413, China; Department of Engineering Physics, Tsinghua University, Beijing 100084, China |
| Abstract: | This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device. |
| Keywords: | single event effect static random access memory cross section simulation |
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