Electron tunneling in single layer graphene with an energy gap |
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| Authors: | Xu Xu-Guang Zhang Chao Xu Gong-Jie Cao Jun-Cheng |
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| Affiliation: | Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; School of Engineering Physics, University of Wollongong, New South Wales 2522, Australia |
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| Abstract: | When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy regime. In this paper, we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap. It is found that when the electron is at a zero angle of incidence, the transmission probability as a function of incidence energy has a gap. Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor. The conductance under zero temperature has a gap. The properties of electron transmission may be useful for developing graphene-based nano-electronics. |
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| Keywords: | graphene transmission |
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