| Measurement of GaN/Ge（001） Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy |
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| 引用本文： | GUO Yan,LIU,Xiang-Lin SONG,Hua-Ping YANG,An-Li ZHENG,Gao-Lin WEI,Hong-Yuan YANG,Shao-Yan ZHU,Qin-Sheng WANG,Zhan-Guo. Measurement of GaN/Ge（001） Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy[J]. 中国物理快报, 2010, 27(6): 183-186 |
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| 作者姓名： | GUO Yan LIU Xiang-Lin SONG Hua-Ping YANG An-Li ZHENG Gao-Lin WEI Hong-Yuan YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guo |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 60776015 and 60976008, the National Basic Research Program of China under Grant No 2006CB604907, and the High-Technology R＆D Program of China （Nos 2007AA03Z402 and 2007AA03Z451）. |
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| 摘 要： | ![]()
X-ray photoelectron spectroscopy has been used to measure the valence band offset （VBO） at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 ±0.19 eV, according to the relationship between the conduction band offset AEc and the valence band offset △Ev：△Ec =EgGaN -EgGe - △Ev, and taking the room-temperature band-gaps as 3.4 and 0.67eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6±0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.
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| 关 键 词： | X射线光电子能谱 异质结界面 价带偏移 氮化镓 锗 测量 基础设备 GaN |
| 收稿时间： | 2010-01-15 |
Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy |
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| GUO Yan,LIU Xiang-Lin,SONG Hua-Ping,YANG An-Li,ZHENG Gao-Lin,WEI Hong-Yuan,YANG Shao-Yan,ZHU Qin-Sheng,WANG Zhan-Guo. Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy[J]. Chinese Physics Letters, 2010, 27(6): 183-186 |
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| Authors: | GUO Yan LIU Xiang-Lin SONG Hua-Ping YANG An-Li ZHENG Gao-Lin WEI Hong-Yuan YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guo |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Abstract: | ![]()
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| Keywords: | 73.40.Kp 79.60.Jv 81.05.Ea |
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