| Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature |
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| 作者姓名： | 丁万昱 徐军 朴勇 李艳琴 高鹏 邓新绿 董闯 |
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| 作者单位： | State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 50390060. |
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| 摘 要： | Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.
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| 关 键 词： | 氢硅氮化物 薄膜 沉积作用 微波 等离子体 磁电管 |
| 收稿时间： | 2005-05-17 |
| 修稿时间： | 2005-05-17 |
Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature |
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| Ding WanYu;Xu Jun;Piao Yong;Li YanQin;Gao Peng;Deng XinLu;Dong Chuang.Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature[J].Chinese Physics Letters,2005,22(9):2332-2334. |
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| Authors: | Ding WanYu;Xu Jun;Piao Yong;Li YanQin;Gao Peng;Deng XinLu;Dong Chuang |
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