| MPCVD金刚石薄膜微波功率和沉积压力匹配性研究 |
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| 引用本文： | 张帅,安康,邵思武,黄亚博,杨志亮,陈良贤,魏俊俊,刘金龙,郑宇亭,李成明.MPCVD金刚石薄膜微波功率和沉积压力匹配性研究[J].人工晶体学报,2022,51(5):910-919. |
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| 作者姓名： | 张帅 安康 邵思武 黄亚博 杨志亮 陈良贤 魏俊俊 刘金龙 郑宇亭 李成明 |
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| 作者单位： | 1.北京科技大学新材料技术研究院,北京 100083; 2.北京科技大学顺德研究生院,佛山 528399 |
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| 基金项目： | 国家自然科学基金(52102034)；;中央高校基本科研业务费(FRF-MP-20-48)； |
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| 摘 要： | 微波等离子体化学气相沉积(MPCVD)法制备的高质量金刚石在很多领域均有广泛应用前景。本研究采用9 kW微波功率,分别在13 kPa、14 kPa、15.5 kPa、17 kPa的腔室压力下进行薄膜沉积实验,发现在15.5 kPa、17 kPa的腔室压力下沉积的薄膜在中心区域出现异常生长情况,具体表现为中心存在明显的阶梯式凸起。为揭示薄膜中心出现异常沉积的原因,使用SEM和Raman分析薄膜表面形貌和质量,通过数值模拟进行沉积过程建模计算和分析功率密度和流场分布。结果表明在相同功率下,提高腔室压力,压缩等离子体,因平均自由程较短,扩散能力不足,将导致衬底中心区域比边缘区域更易密集生长,金刚石薄膜中心区域出现明显的阶梯。同时,薄膜整体的生长速率、均匀性、质量均会在超过压力极值后降低。
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| 关 键 词： | 金刚石薄膜 MPCVD 沉积压力 微波功率 均匀性 数值模拟 |
| 收稿时间： | 2022-02-25 |
Microwave Power and Deposition Pressure Matching of MPCVD Diamond Films |
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| ZHANG Shuai,AN Kang,SHAO Siwu,HUANG Yabo,YANG Zhiliang,CHEN Liangxian,WEI Junjun,LIU Jinlong,ZHENG Yuting,LI Chengming.Microwave Power and Deposition Pressure Matching of MPCVD Diamond Films[J].Journal of Synthetic Crystals,2022,51(5):910-919. |
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| Authors: | ZHANG Shuai AN Kang SHAO Siwu HUANG Yabo YANG Zhiliang CHEN Liangxian WEI Junjun LIU Jinlong ZHENG Yuting LI Chengming |
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| Affiliation: | 1. Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China; 2. Shunde Graduate School, University of Science and Technology Beijing, Foshan 528399, China |
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| Abstract: | High-quality diamond prepared by microwave plasma chemical vapor deposition (MPCVD) has application prospects in many high-precision fields. The film deposition experiments were carried out using microwave power 9 kW. The chamber pressures are 13 kPa, 14 kPa, 15.5 kPa, and 17 kPa, respectively. It was found that the deposited films under pressure of 15.5 kPa and 17 kPa exhibit abnormal growth in the central region, which is manifested as an obvious stepped bulge in the center. Surface morphology and film quality of the film were analyzed by SEM and Raman in order to reveal the reason for the abnormal deposition in the center of the film. Meanwhile, the deposition process was modeled, the power density and flow field distribution were calculated and analyzed by numerical simulation. The results show that at the same power, increasing the chamber pressure and compressing the plasma will lead to more dense growth in the central region of the film than that in the edge region and obvious steps in the central region of the diamond film, due to the short mean free path and insufficient diffusion capacity. The overall growth rate, uniformity and quality of the film will decrease after exceeding pressure limit. |
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| Keywords: | diamond film MPCVD deposition pressure microwave power uniformity numerical simulation |
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