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完全Heusler合金Cr2ZrSb/Sc2FeSn(100)异质结的结构、电磁特性及电子性质
引用本文:贾维海,杨昆,王智,周庭艳,黄海深,吴波.完全Heusler合金Cr2ZrSb/Sc2FeSn(100)异质结的结构、电磁特性及电子性质[J].人工晶体学报,2022,51(6):1020-1027.
作者姓名:贾维海  杨昆  王智  周庭艳  黄海深  吴波
作者单位:1.遵义师范学院物理与电子科学学院,遵义 563006; 2.贵州师范大学物理与电子科学学院,贵阳 550025
基金项目:贵州省教育厅创新群体重大研究项目(黔教合KY字[2020]025);遵义市校联合资金青年成长项目(遵市科合HZ字(2021)211号 );贵州省科技厅一般项目(黔科合基础-ZK[2021]一般029);贵州省研究生科研基金(黔教合YJSCXJH[2019]042);贵州省普通高等学校科技拔尖人才项目(黔教合KY字[2020]037);贵州省高校洁净能源材料与器件特色重点实验室(黔教合KY字[2019]055)
摘    要:本文采用基于密度泛函理论的第一性原理计算,系统研究了完全Heusler合金Cr2ZrSb/Sc2FeSn(100)异质结中六种界面CrCr-ScFe-T、ZrSb-ScSn-T、CrCr-ScSn-B、ZrSb-ScFe-B、CrCr-ScFe-V和 ZrSb-ScSn-V的电磁特性及电子性质。结果表明,界面原子间的相互作用造成了界面间原子层的不均匀,导致界面层的力学失配率加大。与块体中的高自旋极化率相比,异质结的自旋极化率遭到不同程度的破坏。但是,ZrSb-ScFe-B界面保留了较高的自旋极化率值,通过Julliere模型预测该异质结在低温下隧道磁电阻值约为429.29%,在自旋电子学器件中具有潜在的应用前景。

关 键 词:第一性原理  Heusler合金  电磁特性  电子性质  自旋极化  异质结  磁性器件  
收稿时间:2022-01-04

Structure,Electromagnetic and Electronic Properties of Complete Heusler Alloy Cr2ZrSb/Sc2FeSn (100) Heterojunction
JIA Weihai,YANG Kun,WANG Zhi,ZHOU Tingyan,HUANG Haishen,WU Bo.Structure,Electromagnetic and Electronic Properties of Complete Heusler Alloy Cr2ZrSb/Sc2FeSn (100) Heterojunction[J].Journal of Synthetic Crystals,2022,51(6):1020-1027.
Authors:JIA Weihai  YANG Kun  WANG Zhi  ZHOU Tingyan  HUANG Haishen  WU Bo
Affiliation:1. School of Physics and Electronic Science, Zunyi Normal University, Zunyi 563006, China; 2. School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China
Abstract:The electromagnetic and electronic properties of six atomic terminations CrCr-ScFe-T, ZrSb-ScSn-T, CrCr-ScSn-B, ZrSb-ScFe-B, CrCr-ScFe-V, and ZrSb-ScSn-V in complete Heusler alloy Cr2ZrSb/Sc2FeSn(100) heterojunction were systematically studied by first-principles calculation based on density functional theory. The results show that the interactions between the interface atoms causes the unevenness of the interface atomic layer, which leads to the increase of the mechanical mismatch rate of the interface layer. Compared with the high spin polarization in the bulk, the spin polarization of the heterojunction is destroyed to varying degrees. Fortunately, the termination ZrSb-ScFe-B retains a high spin polarization value and has a tunnel magnetoresistance of 429.29% at low temperature according to the Julliere model, indicating its potential application prospects in spintronic devices.
Keywords:first-principle  Heusler alloy  electromagnetic property  electronic property  spin polarization  heterojunction  magnetic device  
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